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| GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES s s s s Internally Configured With Upper Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s s High Power Choppers Motor Controllers Induction Heating Resonant Converters Power Supplies 1(A,E) 2(K) 3(C) 5(E1) 4(G) 9(C1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The module incoporates high current rated freewheel diodes. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. 11 10 8 9 Fig. 1 Chopper circuit diagram 1 2 3 6 7 5 4 ORDERING INFORMATION Order As: GP200MKS12 Note: When ordering, please use the whole part number. Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP200MKS12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Collector current Peak collector current Max. transistor power dissipation Isolation voltage DC, Tcase = 72C 1ms, Tcase = 72C Tcase = 25C, Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1200 20 200 400 1490 2500 Units V V A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - antiparallel diode Thermal resistance - freewheel diode Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 -40 150 125 125 5 5 C C C Nm Nm Continuous dissipation 160 80 15 C/kW C/kW C/kW Min. Max. 84 Units C/kW 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MLK12 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage - antiparallel diode DC tp = 1ms IF = 200A IF = 200A, Tcase = 125C Diode forward voltage - freewheel diode IF = 200A IF = 200A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 2.7 3.2 2.2 2.3 1.7 1.7 25 30 Max. 1 12 1 6.5 3.5 4.0 200 400 2.4 2.5 2.1 2.2 Units mA mA A V V V A A V V V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP200MKS12 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge freewheel diode IF = 200A, VR = 50% VCES, dIF/dt = 2500A/s Test Conditions IC = 200A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 500 150 25 400 80 20 20 Max. 700 200 35 550 110 30 30 Units ns ns mJ ns ns mJ C Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge freewheel diode IF = 200A, VR = 50% VCES, dIF/dt = 2000A/s Test Conditions IC = 200A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 600 200 40 500 110 40 55 Max. 800 250 50 650 150 55 70 Units ns ns mJ ns ns mJ C 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MLK12 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V 400 350 300 Collector current, IC - (A) Collector current, IC - (A) Vge = 20/15/12/10V 400 Common emitter Tcase = 125C Common emitter Tcase = 25C 350 300 250 200 150 100 50 0 0 250 200 150 100 50 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics 60 Tj = 125C VGE = 15V 50 VCE = 600V Turn-on energy, EON - (mJ) 50 A Tj = 125C 45 VGE = 15V VCE = 600V 40 Turn-off energy, EOFF - (mJ) A B C B 40 C 30 35 30 25 20 15 10 20 10 0 0 A: Rg = 10 B: Rg = 6.2 C: Rg = 4.7 50 100 150 Collector current, IC - (A) 200 5 0 0 50 A: Rg = 10 B: Rg = 6.2 C: Rg = 4.7 100 150 Collector current, IC - (A) 200 Fig. 5 Typical turn-on energy vs collector current Fig. 6 Typical turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 www.dynexsemi.com GP200MKS12 36 32 VGE = 15V VCE = 900V Tcase = 125C 900 800 700 Switching times, - (ns) Diode turn-off energy, Eoff(diode) - (mJ) 28 24 20 16 12 8 4 0 0 25 50 75 Tj = 125C VGE = 15V VCE = 600V Rg = 4.7 td(off) td(on) 600 500 400 300 200 100 Tcase = 25C tf 100 125 150 175 200 0 0 tr 50 100 150 Collector current, IC - (A) 200 Collector current, IT - (A) Fig. 7 Freewheel diode typical turn-off energy vs collector current 400 Tj = 25C 350 300 Tj = 125C Fig. 8 Typical switching characteristics 10000 1000 IC max. (single pulse) 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 3.5 Collector current, IC - (A) Forward current, IF - (A) 100 IC m 50s ax .D C 100s (c on tin uo 10 us ) tp = 1ms 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000 Fig. 9 Freewheel diode typical forward characteristics Fig. 10 Reverse bias safe operating area 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MLK12 500 450 400 Collector current, IC - (A) 1000 Transient thermal impedance, Zth (j-c) - (C/kW ) Antiparallel diode 350 300 250 200 150 100 50 0 0 Tcase = 125C Vge = 15V Rg = 4.7* *Recommended minimum value 200 1000 600 400 800 Collector-emitter voltage, Vce - (V) RBSOA 1200 100 Transistor 10 1 0.001 0.01 0.1 Pulse width, tp - (s) 1 10 Fig. 11 Forward bias safe operating area Fig. 12 Transient thermal impedance 320 280 240 Collector current, IC - (A) 200 160 120 80 40 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Case temperature, Tcase - (C) Fig. 13 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com GP200MKS12 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 0.5 28 0.5 11 6 62 0.8 48 0.3 10 1 2 3 7 4x Fast on tabs 8 9 5 4 93 0.3 3x M6 8 38max 23 106 0.8 108 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MLK12 ASSOCIATED PUBLICATIONS Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving high power IGBTs with Concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5190 POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10 www.dynexsemi.com GP200MKS12 http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5448-1 Issue No. 1.2 April 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com |
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